[P210] Room temperature processed ISFETs based on amorphous semiconductors oxides

Since Ion Sensitive Field Effect Transistors (ISFETs) were introduced by Bergveld in 1970, much effort is put into new and improved materials for device optimization and sensitivity enhancement [1]. ISFET based biosensors have a fast response, are suitable for miniaturization and arrays can be made for simultaneous measurement of various parameters. Actually, ISFET device production relies on standard CMOS technology where miniaturization and chip integration is easily achieved but high processing temperatures are required.